Ambitions and vision

Mi2-factory GmbH specializes in innovative semiconductor manufacturing technologies, particularly for silicon carbide (SiC) power microchips, which are crucial for applications in wind power, photovoltaics, and electromobility. Their flagship technology, Energy-Filtered Ion Implantation (EFII©), revolutionizes microchip production by enabling depth-distributed and highly homogeneous doping, improving performance while reducing costs and enhancing design flexibility. This advanced method allows for precise control over the doping process, where ions are implanted into semiconductor materials like silicon carbide (SiC) to modify their electrical properties. EFII© optimizes the distribution and depth of these ions, significantly enhancing the performance and efficiency of the resulting microchips. This technology is pivotal for producing high-quality, high-performance SiC power devices used in various energy and electronics applications.Mi2-factory is committed to environmental sustainability, aligning their developments with global climate goals by enhancing energy efficiency in semiconductor manufacturing. This approach also supports the production of advanced power electronics that contribute to more sustainable energy consumption. 

Technical fields

Mi2-factory GmbH offers specialized services in the semiconductor industry, primarily focused on the development and implementation of their Energy-Filtered Ion Implantation (EFII©) technology. This technology is used for doping semiconductor materials like silicon carbide (SiC) with high precision and efficiency. Their services cater to the production of SiC power microchips, which are essential for high-performance applications in renewable energy, automotive, and industrial electronics sectors. They enable a highly controlled doping profile in semiconductor materials. This technology allows for precise depth control and distribution of dopants within silicon carbide (SiC) substrates. The EFII process achieves uniform doping at targeted depths, enhancing the electrical characteristics and performance of SiC power microchips. This level of control is essential for optimizing device efficiency and performance in various high-demand applications. Mi2-factory GmbH offers advanced simulation services that complement their Energy-Filtered Ion Implantation (EFII©) technology. These services involve detailed modeling of the implantation process to predict and optimize the doping profiles in silicon carbide (SiC) semiconductors. By simulating different scenarios, they can fine-tune the implantation parameters to achieve desired electrical properties and efficiencies in the final semiconductor devices, aiding in design and development stages for customized semiconductor solutions.